GB/T 32278-2015
AbolishedTest methods for flatness of monocrystalline silicon carbide wafers
碳化硅单晶片平整度测试方法
Application Summary AI generated
This standard specifies the test methods for measuring the flatness of monocrystalline silicon carbide wafers, including parameters such as total thickness variation, bow, and warp. It is applied in the semiconductor and electronics industries for quality control during the manufacturing and inspection of SiC wafers used in high-power, high-frequency, and optoelectronic devices. The standard ensures consistent measurement procedures for wafer suppliers and device fabricators to meet stringent substrate flatness requirements.
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